Photothermal Characterization of Electrochemical Etching Processed n-Type Porous Silicon
نویسندگان
چکیده
منابع مشابه
Structural and optical properties of n- type porous silicon– effect of etching time
Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...
متن کاملstructural and optical properties of n- type porous silicon– effect of etching time
porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...
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Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...
متن کاملFabrication of porous silicon-based silicon-on-insulator photonic crystal by electrochemical etching method
We present a fast, novel method for building porous silicon-based silicon-on-insulator photonic crystals in which a periodic modulation of the refractive index is built by alternating different electrochemical etching currents. The morphology and reflectance spectra of the photonic crystals, prepared by the proposed method, are investigated. The scanning electron micrograph and atomic force mic...
متن کاملDynamic Simulation of Electrochemical Etching of Silicon
In the presented work the dynamic simulation of a silicon anodization process is performed. Two mechanisms of etch form development (diffusion in electrolyte, current flow) are considered and simulated. Influence of electrolyte conductivity and radius of the opening in the masking layer is discussed.
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1997
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.79.5022